Search results for "Silicon oxynitride"
showing 3 items of 3 documents
A Novel High‐Pressure Tin Oxynitride Sn 2 N 2 O
2020
Chemistry - a European journal in Press(in Press), chem.201904529 (2019). doi:10.1002/chem.201904529
Sputtered SiOxNy thin films: improving optical efficiency of liquid crystal diffuser elements in multi-focal near-to-eye display architecture
2021
In this work we present reactive sputtered SiOxNy films with a variable refractive index as a convienent solution for contrast improvement of liquid crystal diffuser multi stacks in near-to-eye AR/VR displays. The focus concerns minimization of light reflections between internal structures, in particular ITO, by optimizing internal layers through tailored properties of thin film coatings, as well as subsequent laser patterning of thin film stack. Inorganic thin films have been deposited on glass by physical vapor deposition. Corresponding refractive index, thickness, uniformity and dielectric characteristics and other electro-optical properties have been measured and their impact on the res…
Cathodoluminescence and photoluminescence study of trap centers in amorphous silicon oxynitride
2002
Amorphous silicon oxynitride (a-SiO/sub x/N/sub y/) films with different compositions were prepared using low-pressure chemical vapor deposition (LPCVD) technique, The cathodoluminescence and photoluminescence of this samples were measured from the red band to the ultraviolet band to study the trap centers in silicon oxynitride. A 1.8-1.9 eV band was found and is attributed to the oxygen and nitrogen atoms with unpaired electrons whereas the 2.7 eV band is attributed to two-fold coordinated silicon atoms with two electrons. The 5.4 eV shoulder is due to the peroxy radicals and other ultraviolet bands are supposed to due due to the Si-Si bonds.